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MJ21294 NPN Silicon Power Transistor
With superior safe operating area performance, this power transistor is ideal for high temperature linear control circuits.
Features
* Exceptional Safe Operating Area * Dual Die Device with Standard 40 mil pins * Pb-Free Package is Available*
Benefits
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* More Reliable Performance at Higher Powers * Designed for Higher Temperature SOA * Interchangeable with Standard Single Die TO-3 Devices
Applications
20 AMPS 250 VOLTS 350 WATTS
MARKING DIAGRAM
* * * * * *
Linear Power Supplies Battery Conditioning DC Motor Control Positioners DC Heating Controls High Power Audio Amplifiers
MJ21294 G A YY WW MEX
TO-204AA (TO-3) CASE 1-07
MJ21294G AYY WW MEX
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current - Continuous Peak (Note 1) Base Current - Continuous Total Power Dissipation @ TC = 25C Derate Above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5.0 400 20 40 5.0 350 2.0 - 65 to +200 Unit Vdc Vdc Vdc Vdc Adc Adc W W/C C
= Specific Device Code = Pb-Free Package = Assembly Site = Year = Work Week = Assembly Location
ORDERING INFORMATION
Device MJ21294 MJ21294G Package TO-3 TO-3 (Pb-Free) Shipping 100 Units / Tray 100 Units / Tray
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Symbol RqJC Max 0.50 Unit C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. (continued) *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2005
1
August, 2005 - Rev. 0
Publication Order Number: MJ21294/D
MJ21294
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 40 Vdc, t = 1 s (non-repetitive) ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, VCE = 5 Vdc) Base-Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) NOTE: Pulse Test: Pulse Width = 300 ms, Duty Cycle 2% fT Cob 4 - - - - 500 MHz pF hFE 40 15 VBE(on) VCE(sat) - - - - 0.5 1.0 - - - - 100 - 1.4 Vdc Vdc IS/b 6.0 - - Adc VCEO(sus) ICEO IEBO ICEX 250 - - - - - - - 100 10 100 Vdc mAdc mAdc mAdc Symbol Min Typ Max Unit
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MJ21294
TYPICAL CHARACTERISTICS
1000 VCE = 5 V hFE , DC CURRENT GAIN 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.1 TJ = 25C -25C VCE = 5 V
TJ = 100C 100 -25 C
25C
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
100C
10 0.1
1.0 10 IC COLLECTOR CURRENT (AMPS)
100
1.0 10 IC, COLLECTOR CURRENT (AMPS)
100
Figure 1. DC Current Gain
V CE(s) , COLLECTOR-EMITTER SATURATION VOLTAGE (V) V BE(s) , BASE-EMITTER SATURATION VOLTAGE (V)
Figure 2. Base-Emitter Voltage
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.1 IC/IB = 10 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 TJ = 25C -25C
0.40 0.36 0.32 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0.00 0.1 -25C 1.0 10 IC, COLLECTOR CURRENT (AMPS) IC/IB = 10 100 TJ = 25C 100C
100C
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
100 IC, COLLECTOR CURRENT (AMPS) 10 ms 100 ms
10 DC 1.0
0.1
There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.
1000
10
100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
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MJ21294
PACKAGE DIMENSIONS
TO-204AA (TO-3) CASE 1-07 ISSUE Z
A N C -T- E D U V
2 2 PL SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77
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0.13 (0.005) L G
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TQ
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-Q- 0.13 (0.005)
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TY
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STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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MJ21294/D

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